Thermoelectric refrigeration material and method of making the same
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United States of America Patent
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Mar 8, 1994
Grant Date -
N/A
app pub date -
Mar 18, 1992
filing date -
Mar 18, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a thermoelectric refrigeration material with thermoelectric conversion characteristic, in order to improve crystallinity of a system of bismuth-antimony (Bi-Sb) and thereby to improve the figure of merit Z, bismuth (Bi), antimony (Sb) and silicon monoxide (SiO) are deposited on a substrate at a predetermined rate in a thermally nonequilibrium state by an ICB method so that a thin film crystal having a granular structure including crystal grains of around one micron is obtained. Consequently, the figure of merit Z can be improved by selectively varying the thermal conductivity K which largely depends upon the crystallinity and which is one of elements of the figure of merit Z determining the thermal conversion coefficiency.
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