Process for metal deposition for microelectronic interconnections
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United States of America Patent
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Mar 8, 1994
Grant Date -
N/A
app pub date -
Aug 8, 1991
filing date -
Aug 8, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for forming interconnections in microelectronic devices, including interconnections through small vias between different layers in the microelectronic devices include the spin coating of a film comprising a polyoxometalate and an organic material on the substrate. The film is optionally patterned by lithography, the polymer is removed, and the polyoxometalate is reduced to a metal layer. The metal layer may in one embodiment provide a nucleating zone for the deposition of metal.
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