Process for forming a thin film of silicon
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United States of America Patent
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Mar 15, 1994
Issued Date -
N/A
app pub date -
Jan 12, 1993
filing date -
Jul 26, 1984
priority date (Note) -
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Abstract
The thickness of a thin film of an element semiconductor may be determined by counting the number of cycles of gaseous component introductions within a crystal growth vessel. Each cycle permits at most one monolayer of growth since the pressure in the vessel during gaseous component introduction is maintained under a saturation condition. The temperature to which a substrate in the vessel is heated is that for which epitaxial growth results.
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