Reduction of foreign particulate matter on semiconductor wafers
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United States of America Patent
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Mar 15, 1994
Issued Date -
N/A
app pub date -
Jan 29, 1992
filing date -
Sep 26, 1990
priority date (Note) -
Expired
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Abstract
A substantial reduction in the foreign particulate matter contamination on surfaces, such as the surfaces of semiconductor wafers, is achieved by treating the surfaces with a solution comprising a strong acid and a very small amount of a fluorine-containing compound. A preferred method employs a solution containing sulfuric acid, hydrogen peroxide and a very small amount of hydrofluoric acid, which is effective in reducing foreign particulate matter contamination, without significant etching, of the surface being treated.
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