Field-effect transistor
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United States of America Patent
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Mar 15, 1994
Issued Date -
N/A
app pub date -
Feb 7, 1992
filing date -
Mar 25, 1986
priority date (Note) -
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Abstract
A field-effect transistor comprising a semiconductor substrate having source and drain regions and a gate electrode, wherein a thin organic film including donor and acceptor molecules is provided between the semiconductor substrate and the gate electrode. When a predetermined voltage is applied to the gate electrode, charge transfer occurs between the donor and acceptor molecules included in the thin organic film, thereby controlling the surface potential of the semiconductor substrate.
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