Fabrication method for vacuum microelectronic devices
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United States of America Patent
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Mar 22, 1994
Grant Date -
N/A
app pub date -
Dec 24, 1992
filing date -
Dec 24, 1992
priority date (Note) -
Expired
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Abstract
A fabrication method for a microstructure having a vacuum sealed cavity therein including the process steps of forming an aluminum filled cavity in a body of silicon material and heating the structure such that the aluminum is absorbed into the silicon material leaving a vacuum in the cavity. In one embodiment of the invention a cavity is etched into a silicon wafer and filled with aluminum. A silicon dioxide layer is formed over the aluminum filled cavity and the structure is heated to produce the vacuum cavity.
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