Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
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United States of America Patent
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Mar 22, 1994
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N/A
app pub date -
Aug 19, 1991
filing date -
Jan 18, 1991
priority date (Note) -
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Abstract
A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique configurations, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is characterized, inter alia, by numerous stable and truly non-volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration.
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