Gate charge recovery circuit for gate-driven semiconductor devices
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United States of America Patent
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-
Mar 29, 1994
Grant Date -
N/A
app pub date -
Mar 12, 1993
filing date -
Mar 12, 1993
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A gate charge recovery circuit prevents generation of the voltage spike that would otherwise appear across the sense resistor that is employed to detect the current flowing through the switched terminal of a gate-driven semiconductor device when the device is turned on. The gate charge recovery circuit comprises the combination of a capacitor connected between the reference terminal of the semiconductor device and the positive terminal of a driver and a filter resistor connected between the positive terminal of the driver and the positive terminal of a voltage source.
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