Heat radiating component and semiconductor device provided with the same
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United States of America Patent
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-
Mar 29, 1994
Grant Date -
N/A
app pub date -
Jun 26, 1992
filing date -
Jul 1, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor laser is provided with a heat radiating component for radiating or dissipating heat which is generated in operation. In this heat radiating component, a polycrystalline diamond layer (3) synthesized by vapor deposition is formed on an upper surface of a stem (4). A semiconductor laser element (1) is bonded, e.g. by brazing to the surface of the vapor-deposited polycrystalline diamond layer (3) through a brazing filler metal (2). The heat radiating component has a thermal expansion coefficient which is the same as that of an LSI chip to be mounted thereon to provide an excellent heat radiating property.
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