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Abstract

A continuous weight-update device for a synaptic element including at least one MOS transistor comprises a floating node having a capacitance associated therewith, the floating gate comprising at least a part of the floating node, first and second input lines, first and second error lines, an electron tunneling structure coupled to the floating node for tunneling electrons from the floating node, and an electron injecting structure coupled to the floating node for injecting electrons onto the floating node. Control circuitry is responsive to signals on the first input and error lines, for activating the electron tunneling structure, and control circuitry is responsive to signals on the second input and error lines, for activating the electron injecting structure. Circuitry is provided for driving signals onto the first and second input and error lines. Both a single synapse and an array of synapses incorporating the continuous weight-update device are also taught.

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First Claim