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Abstract

A process for preparing a film consisting of at least about 90 weight percent of cubic cadmium sulfide is disclosed. In one step of this process, a cadmium sulfide target with a density of at least about 3.8 grams per cubic centimeter is provided. In a separate step, there is provided a heated substrate which is at a temperature of from about 50 to about 300 degrees Centigrade. The heated substrate is disposed at a distance of from about 2 to about 10 centimeters from the target. Both the heated substrate and the target are subjected to a pressure of from about 10.sup.-4 to about 10.sup.-9 Torr. Thereafter, the cadmium sulfide target is contacted with a laser beam with a wavelength of from about 100 nanometers to about 30 microns, an energy of at least about 1.0 watt, and a beam width of less than about 5 millimeters.

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First Claim