Importance

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Abstract

Each diode of an indium antimonide electro-optical detector array on a dielectric backing transparent to optical energy to be detected includes a junction that less than about a half micron from the diode surface on which the energy is initially incident. The optical energy is incident on a P-type doped region prior to being incident on a bulk N-type doped region. Both P-and N-type doped regions of adjacent diodes are spaced from each other. Metal electrically connects the P-type doped regions together without interfering substantially with the incident optical energy. A multiplexer integrated circuit substrate extends parallel to the backing and includes an array of elements for selective readout of the electric property of the diodes. The elements and diodes have approximately the same topographical arrangement so that corresponding ones of the elements and diodes are aligned. An array of indium columns or bumps connects the corresponding aligned elements and diodes.

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First Claim