Titanium-tungsten target material and manufacturing method thereof

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United States of America Patent

PATENT NO 5306569
SERIAL NO

07914544

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Abstract

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A titanium-tungsten target material capable of limiting the amount of particles generated during sputtering and a method of manufacturing this titanium-tungsten material. The titanium-tungsten target material has a titanium-tungsten alloy phase which occupies 98% or more of the whole area of the material as observed in a micro-structure thereof. In one example of the manufacturing method, an ingot obtained by melting tungsten and titanium is processde by a solution treatment to form a titanium-tungsten target, or a power obtained by melting the ingot is sintered to form a target. Preferably, the melting may be performed under reduced pressure in an electron beam melting manner. In another example of the manufacturing method, a powder is formed from a molten metal by an atomization method and the obtained powder is sintered to form a titanium-tungsten target. For sintering of the powder, it is preferable to apply hot isostatic pressing or hot pressing.

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Patent Owner(s)

  • HITACHI METALS, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hiraki, Akitoshi Yasugi, JP 7 167

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