Method of making a semiconductor device using a nanochannel glass matrix
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United States of America Patent
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Apr 26, 1994
Issued Date -
N/A
app pub date -
Apr 29, 1993
filing date -
Jun 12, 1992
priority date (Note) -
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Abstract
The present invention provides a method of forming a semiconductor device mprising the steps of: forming a glass block of an acid inert glass having acid etchable glass rods extending therethrough, the acid etchable glass rods having an average diameter of less than 1 micron; partially etching one end of the acid etchable rods surface of the glass block to form cavities in the glass block on one surface thereof having an average diameter of less than 1 micron; depositing material(s) in the cavities to form a semiconductor device. The present invention also provides a method for forming a semiconductor device in which the acid etchable glass rods are completely etched and the deposition material(s) is deposited to fill the nanochannels formed by the etching. The present invention also provides semiconductor devices made by these methods.
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