Fabrication of electronic devices by electroless plating of copper onto a metal silicide
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United States of America Patent
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May 3, 1994
Issued Date -
N/A
app pub date -
Apr 27, 1993
filing date -
Sep 30, 1991
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Abstract
It has been found that selective metallization in integrated circuits is expeditiously achieved through a copper plating procedure. In this process, palladium silicide is used as a catalytic surface and an electroless plating bath is employed to introduce copper plating only in regions where the silicide is present. Use of this procedure yields superior filling of vias and windows with excellent conductivity.
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