Importance

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Abstract

A transistor package for use in common base linear, amplification applications includes a base flange member to which an insulating substrate is disposed wherein the bottom surface of the substrate is metalized to provide electrical contact to the flange member. Opposing ends of the substrate are edge metalized to conductively contact the bottom surface while the center portion of the top surface of the substrate has a selective metalized patterned formed therein and is isolated from the metalized opposing edges A metal bonding pad is formed centrally within the center portion and isolated therefrom to which the collector electrode of a transistor chip is die bonded. A lead frame comprising first and second opposing leads and a third lead adjacent to and parallel to the first lead is brazed to the center portion such that the first and second leads are insulated from the center portion while the third lead makes direct contact thereto. The emitter and collector electrodes are wire bonded to the first and second leads while the base electrode of the transistor is wire bonded to the metalized center portion of the substrate. One plate of a plurality of DC MOS blocking capacitors are bonded to the metalized edges with the other plate being wire bonded to the center portion to provide AC ground to the base electrode while isolating DC ground therefrom.

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First Claim