Semiconductor bond pad structure and method
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United States of America Patent
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May 3, 1994
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N/A
app pub date -
Jul 27, 1992
filing date -
Jul 27, 1992
priority date (Note) -
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Abstract
A method for forming an improved bonding pad structure. A bond pad structure is formed by depositing a barrier layer over an underlying region of a semiconductor device, and then depositing a first conductive layer over the barrier layer. The barrier layer and conductive layer are then patterned and etched to define a conductive region. In a preferred embodiment, the conductive region is formed in the shape of a grid. A second conductive layer is deposited over the conductive region and a portion of the exposed underlying region. The second conductive layer makes a good adhesive contact with the underlying region, thus preventing bond pad lift off.
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