Method for producing semiconductor film
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United States of America Patent
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May 10, 1994
Issued Date -
N/A
app pub date -
Jul 13, 1992
filing date -
Jan 10, 1990
priority date (Note) -
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Importance
Abstract
A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of combined substrates to melt a portion within the assembly to form a molten portion therein; cooling the molten portion to crystallize the portion to form a single crystal structure therein; and separating the first substrate from the second substrate. The method makes it possible to control the crystal axis orientation of the recrystallized single crystal structure.
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