Method for forming a patterned layer using dielectric materials as a light-sensitive material
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United States of America Patent
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May 10, 1994
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N/A
app pub date -
Mar 1, 1993
filing date -
Mar 1, 1993
priority date (Note) -
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Abstract
A method for forming a patterned layer of material begins by providing a substrate (12). A device layer (14) is formed overlying the substrate (12). A layer (16) is formed over the device layer (14). Layer (16) is further characterized as being an inorganic dielectric material, such as a plasma enhanced silicon nitride (PEN) material. A mask (18) is positioned adjacent the layer (16). Ultra-violet (UV) light (20) is selectively exposed to the layer (16) through the mask (18). Exposure from the UV light (20) forms exposed regions (16b) and unexposed regions (16a) of the layer (16). The UV light (20) alters an atomic bonding energy of hydrogen atoms within the exposed regions (16b) while not altering unexposed regions (16a). The layer (16) is exposed to an etchant which etches the exposed regions (16b) and unexposed regions (16a) at different rates. The etching forms a patterned layer from the layer ( 16) which may be used as a masking layer.
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