Method for manufacturing a semiconductor device comprising titanium
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United States of America Patent
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May 17, 1994
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N/A
app pub date -
Dec 3, 1992
filing date -
Dec 5, 1991
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Abstract
A method for manufacturing a semiconductor device comprising forming a titanium or titanium compound film by a CVD method which uses a material gas containing an organic titanium compound of the formula (I) ##STR1## wherein R is a hydrogen atom, a lower alkyl group, a C.sub.8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas.
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