Field effect transistor having a gate dielectric with variable thickness
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United States of America Patent
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May 24, 1994
Grant Date -
N/A
app pub date -
Aug 26, 1991
filing date -
Aug 26, 1991
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A field effect transistor, FET, (11) having a gate dielectric of varying thickness (14, 24) to improve device performance. The FET (11) is made on a substrate (10) and has a control electrode, or gate (16), and two current electrodes, or source and drain regions (28), which are separated by a channel region. The gate (16) is separated from the channel region by a gate dielectric. The gate dielectric has a centrally located first region that is of a first thickness (14) and a second region which is adjacent a perimeter of the first region that is of a second thickness (24). The second thickness (24) is made greater than the first thickness (14).
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