Photo-sensing device
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United States of America Patent
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May 24, 1994
Issued Date -
N/A
app pub date -
Sep 9, 1993
filing date -
Aug 31, 1990
priority date (Note) -
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status (Latency Note)
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Abstract
A region of a second conductivity type is selectively formed in a portion of a semiconductive layer of a first conductivity type to form a pn junction area which serves as a photo-sensing region. A metal film is formed on a surface of the semiconductive layer of the first conductivity type to surround the photo-sensing region. When light to be directed to the photo-sensing region spreads outside the photo-sensing region, the light is reflected by the metal film provided on the surface of the semiconductive crystal layer around the photo-sensing region. Accordingly, the light does not reach the photo-sensing layer of the semiconductive crystal layer and the generation of undesired carriers is prevented.
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