PNPN semiconductor device capable of supporting a high rate of current change with time
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United States of America Patent
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May 31, 1994
Grant Date -
N/A
app pub date -
Jun 11, 1992
filing date -
Nov 27, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A PNPN semiconductor device has an inner P-type region which includes at least one ridge which extends into its outer N-type region and terminates short of the outer boundary of the outer N-type region, the inner P-type region includes a formation which is substantially level with the outer boundary of the outer N-type region, and the device includes a terminal which contacts the outer N-type region and the formation of the inner P-type region. An alternative structure of the PNPN semiconductor device has an inner P-type region having at least one elongate sub-region, of higher conductivity than the remainder of the inner P-type region, lying along the junction between the inner P-type region and the outer N-type region, the formation which is substantially level with the outer boundary of the outer N-type region, and the terminal which contacts the formation and the outer N-type region.
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