Nitridation of titanium-tungsten interconnects
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 7, 1994
Issued Date -
N/A
app pub date -
Jan 22, 1993
filing date -
Oct 3, 1991
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of forming interconnects for submicron integrated circuits that allows use of titanium-tungsten as the interconnect material. The inherent instability of titanium-tungsten to oxidation is addressed by a nitridation process that includes exposing the interconnect to an ambient containing nitrogen (NH.sub.3) at an elevated temperature. Typically, the process is a rapid thermal anneal. A local interconnect may be formed, whereafter an insulating layer can be deposited at a high temperature without causing oxidation within the local interconnect that would adversely affect the resistivity of the material.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully