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Abstract

An X-ray image capture element includes a dielectric substrate layer having a top surface and a bottom surface. A plurality of transistors is arrayed adjacent the top surface of the dielectric layer. A plurality of charge storage capacitors is also arrayed adjacent the top surface of the dielectric layer, each capacitor having a conductive inner microplate connected to at least one of the transistors. Conductive address lines and sense lines are disposed adjacent the top surface of the dielectric layer for electronically activating the transistors and individually accessing each of the capacitors. A photoconductive layer is disposed over the transistors, address and sense lines, and a top conducting layer is disposed over the photoconductive layer opposite the dielectric layer. The image capture element also includes a plurality of charge barrier layers disposed adjacent, respectively, the top surface of each of the inner microplates, and a barrier dielectric layer disposed between and coextensive with the photoconductive layer and the top conducting layer.

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First Claim