Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
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United States of America Patent
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Jun 14, 1994
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Feb 24, 1993
filing date -
Feb 24, 1993
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Abstract
A method for selectively removing oxidized organometallic residues, oxidized organosilicon residues, native oxides, and damaged oxides created in plasma-etching through emersion of plasma-etched silicon wafers in a solution of anhydrous ammonium fluoride and a polyhydric alcohol, which is substantially free of hydrogen fluoride and water.
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