Spin-on glass processing technique for the fabrication of semiconductor devices
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United States of America Patent
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Jun 14, 1994
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N/A
app pub date -
Sep 30, 1992
filing date -
Feb 7, 1990
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Abstract
A method of applying a spin-on glass layer to a substrate is disclosed characterized in that the spin-on glass is applied as a plurality of contiguous thin layers that together form a composite layer. Each thin layer is cured prior to the application of the next layer at a temperature of at least about 300.degree. C., preferably 350.degree. C., for a time sufficient to permit catalyst connection and substantially eliminate volatile residual solvents contained therein. In this way cracking in organic SOGs can be substantially eliminated, and beneficial results can also be achieved with quasi-organic SOGs.
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