Method for evaluating surface state of silicon wafer
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United States of America Patent
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Jun 14, 1994
Grant Date -
N/A
app pub date -
Jul 20, 1992
filing date -
Jul 23, 1991
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for evaluating the surface state of a silicon wafer is here disclosed which comprises the steps of directly bringing an internal reflection element having a larger refractive index than that of silicon into close contact with the surface of the silicon wafer, selecting a light source having a wave length range which compounds present on the surface can absorb, entering light having a larger incident angle than critical angle from the light source into the element, and then evaluating a chemical bond state on the surface containing impurities or impure atoms by means of a multi-reflection method.
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