Method of treating waste gases containing halogen compounds
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United States of America Patent
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Jun 21, 1994
Issued Date -
N/A
app pub date -
Dec 21, 1992
filing date -
Oct 19, 1990
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Abstract
Halogen-containing waste gases resulting from the dry etching step of the process of fabricating semiconductor devices are rendered harmless by removing the halogen compounds concomitant with said waste gases. Waste gases containing halogen compounds are treated by bringing them into contact first with activated carbon and then into contact with a member selected from the group consisting of an alkali agent and a ferric oxide, at a linear velocity of about 3-50 cm/min at ambient temperature, volume ratios of said activated carbon to the alkali agent or the ferric oxide in terms of a substantially dried base being about 2-4, and said alkali agent being selected from a group consisting of calcium hydroxide, calcium oxide, magnesium hydroxide and magnesium oxide.
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