Method of forming resist pattern and photomask therefor
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United States of America Patent
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Oct 31, 1989
Grant Date -
N/A
app pub date -
Jul 7, 1992
filing date -
Jul 12, 1991
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
In a photomask for use in forming a resist pattern by projection exposure of a resist through the photomask, a phase shifter has a first edge part whose image is to be transferred and a second edge part whose image is not to be transferred. A light attenuator is provided to cover the first edge part. The light attenuator may include an array of opaque stripes arranged at a pitch of not more than the limit of resolution, i.e., 0.5.times..lambda./NA, where .lambda. represents the wavelength of light used for the projection exposure, and NA represents the numerical aperture of an optical system used for the projection exposure. In another embodiment, the light attenuator is formed to cover a shifter edge part in alignment with a line of a transmission mask. In a further embodiment, one or more light attenuators having different transparency are used to obtain lines of a resist pattern having different widths.
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