Method for manufacturing a semiconductor device having increased surface area conductive layer
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United States of America Patent
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Jun 28, 1994
Grant Date -
N/A
app pub date -
Feb 28, 1992
filing date -
Mar 23, 1991
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Abstract
A semiconductor device having a capacitor of large capacitance and the fabrication method thereof are disclosed. The semiconductor device comprises; a first electrode composed of a conductive structure whose entire surface, including sidewalls, are uneven and formed on the semiconductor substrate; a second electrode formed on the first electrode; and a dielectric film formed between the first and second electrodes. Also the method comprises the steps of forming as a first electrode a conductive structure with an uneven surface on a semiconductor structure, forming a dielectric film, and forming a conductive layer as a second electrode on the conductive structure. Accordingly, a capacitor of large capacitance and high reliability can be obtained.
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