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Abstract

A technique for doping silicon material or other semiconductors uses gas phase dopant sources under reduced pressure in a radiantly heated, cold-wall reactor. The technique is applied to the automated integrated circuit manufacturing techniques being adopted in modern fabrication facilities. The method includes placing a substrate comprising semiconductor material on a thermally isolated support structure in a reduced pressure, cold-wall reaction chamber; radiantly heating the substrate within the reaction chamber to a controlled temperature; flowing a gas phase source of dopant at controlled pressure and concentration in contact with the substrate so that the dopant is absorbed by the substrate, and annealing the substrate. The substrate may be first coated with a layer of polycrystalline semiconductor, and then gas phase doping as described above may be applied to the polycrystalline layer.

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First Claim