Nonvolatile semiconductor memory device with redundancy circuit

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United States of America Patent

PATENT NO 5329488
SERIAL NO

07985607

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Abstract

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A nonvolatile semiconductor memory device for use as a flash EEPROM includes a plurality of sectors each comprising a plurality of main memory cell regions each composed of a matrix of nonvolatile memory cells and at least one redundant memory cell region composed of a matrix of nonvolatile memory cells. When one of said nonvolatile memory cells in any one of the sectors is found defective and is selected by addressing, it is replaced with one of the nonvolatile memory cells in the redundant memory cell region.

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Patent Owner(s)

Patent OwnerAddress
RENESAS ELECTRONICS CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashimoto, Kiyokazu Tokyo, JP 106 1038

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