Method of producing a silicon nitride film and method of fabricating a semiconductor device
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United States of America Patent
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Jul 19, 1994
Grant Date -
N/A
app pub date -
May 27, 1992
filing date -
May 27, 1991
priority date (Note) -
Expired
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Abstract
A method of producing a silicon nitride film free of photolithographty and dry etching processes and a method of fabricating a semiconductor memory cell device are disclosed. A first polycrystalline silicon film serving as a bottom electrode is selectively formed only on a silicon region of the substrate with a field oxide film and a silicon nitride film is selectively formed only on the first polycrystalline silicon film by selective chemical vapor deposition in which a source gas including a combination of both ammonia and either silane or dichlorosilane is doped with hydrogen chloride. Then, a second polycrystalline film serving as a top electrode is selectively formed on the silicon nitride film.
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