Process for selectively etching diamond
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United States of America Patent
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-
Aug 2, 1994
Grant Date -
N/A
app pub date -
Aug 31, 1992
filing date -
Aug 31, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A process for selectively etching a diamond substrate comprising the steps of forming a graphitic area within a diamond substrate and selectively etching the diamond substrate with a gaseous reactant under conditions sufficient to convert the graphitic area to a gaseous product, preferably while substantially avoiding reacting with the diamond of the diamond substrate. The technique can be used to form a single crystal diamond layer, for example, using a lift-off technique.
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