Importance

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Abstract

A high storage capacity capacitor for a semiconductor structure includes a barrier layer formed on a polysilicon electrode, a lower electrode, a dielectric layer, and an upper electrode. The dielectric material is formed of a high dielectric constant material such as BaSrTiO.sub.3. In order to protect the barrier layer from oxidation during deposition of the dielectric layer and to provide a smooth surface geometry for depositing the dielectric layer, conducting or insulating spacers are formed on the sidewalls of the barrier layer and lower electrode. A smooth dielectric layer can thus be formed that is less susceptible to current leakage. In addition, the insulating spacers can be formed to completely fill a space between adjacent capacitors and to provide a completely planar surface.

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First Claim