Method of eliminating metal voiding in a titanium nitride/aluminum processing
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United States of America Patent
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Aug 16, 1994
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N/A
app pub date -
Nov 6, 1992
filing date -
Nov 6, 1992
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Abstract
The present invention concerns a method of preventing the staining and voiding in an aluminum layer. This staining and voiding was found to be caused by cross-contamination of nitrogen from other processing steps in a multi-chambered wafer processing device. The present invention avoids the staining and voiding by introducing a pumping-out step of an aluminum layer sputtering chamber to remove some of the nitrogen from the aluminum layer deposition chamber before sputtering the aluminum layer onto the silicon wafer. Alternately, the temperature of the aluminum layer deposition step can be reduced to 310.degree. C. or less to prevent the staining or voiding.
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