Importance

Loading Importance Indicators...

Abstract

There is provided a microwave plasma chemical vapor deposition process for forming a functional deposited film on a surface of a substrate by means of microwave plasma chemical vapor deposition conducted in a substantially enclosed film-forming chamber, said film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a substantially cylindrical discharge space encircled by said substrate surface, said substrate being supported by substrate working means, said film-forming chamber being provided with means for evacuating said film-forming chamber, comprising: (a) longitudinally providing a gas feed pipe provided with a plurality of gas liberation holes at the center position of said discharge space; (b) radiately supplying against said surface of substrate a raw material gas through said plurality of gas liberation holes of said gas feed pipe while moving said surface of substrate by said substrate working means; (c) maintaining the gaseous pressure of said discharge space at a value of 100 mTorr or less; (d) applying into said discharge space microwave energy through said microwave introducing window to cause microwave glow discharge in said discharge space, whereby a functional deposited film is formed on said surface of substrate.

Loading the Abstract Image...

First Claim