Importance

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Abstract

A solid-state image sensor has a body of a semiconductor material of one conductivity type having a surface. A plurality of photodetectors are in the body at the surface and are arranged in at least one line. The photodetectors are adapted to photogenerate charge carriers. A CCD shift register is in the body at the surface and extends along the line of photodetectors. Transfer means is provided between the photodetectors and the CCD shift register for transferring charge carriers from the photodetectors to the CCD shift register. A buried region of a conductivity type opposite that of the body is in the body and spaced from the surface. The buried region extends under the photodetectors, CCD shift register, and transfer means. A contact region extends through the body from the surface to the buried region. The contact region is of the same conductivity type as the buried region but of higher conductivity. The contact region is electrically connected to a source of voltage for selectively biasing the buried region so as to transfer electrons from the photodetectors, CCD shift register, and transfer means so as to reset the image sensor.

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First Claim