Multiple port thin film capacitor

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United States of America Patent

PATENT NO 5338950
SERIAL NO

08110575

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Abstract

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A capacitor element for an integrated circuit comprises a thin layer of dielectric material laminarly disposed between first and second layers of electrically conductive material. Each of the layers has n sides, where n is an even intergergreater than four. Preferably, each layer of the capacitor, and therefore the capacitor itself, is shaped as an equiangular polygon. Although, the capacitor may be configured as a hexagon, a decagon, etc., an octagonal configuration is preferred. By eliminating the 90 feed bend, substantial reductions in discontinuity reactances are obtained. The capacitor element may be provided as an element of a hybrid or a monolithic circuit. When the capacitor element is employed as an element of a microwave circuit, the first conductive layer is deposited on a substrate of a semi-insulating material such as gallium arsenide. The dielectric layer may be formed from silicon nitride, silicon dioxide, silica, or tantalum pentoxide, depending upon the specific capacitance required by the application.

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Patent Owner(s)

Patent OwnerAddress
COBHAM DEFENSE ELECTRONIC SYSTEMS CORPORATION58 MAIN STREET BOLTON MA 01740

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bahl, Inder J Roanoke, VA 18 262

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