Bonded wafer and method of manufacturing it
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United States of America Patent
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-
Aug 23, 1994
Issued Date -
N/A
app pub date -
Jan 5, 1993
filing date -
Feb 28, 1990
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A bonded wafer comprising a filmy bond wafer, a base wafer, and an intermediate silicon dioxide layer, wherein the periphery of the bond wafer is etched; this bonded wafer is made by: subjecting the bond wafer to an oxidation treatment to form an oxide film over it; joining the two wafers in a manner such that the oxide film-covered face of the bond wafer is put on the base wafer to thereby sandwich the oxide film between the wafers; heating the combined wafers to thereby create a bonding strength between the two wafers; grinding the exposed face of the bond; etching the periphery of the bond wafer to remove the portion which is not in contact with the base wafer; and polishing the exposed face of the bond wafer until it becomes a thin film.
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