Multilayer magnetic structure wherein the magnitude of the structure magnetoresistance is a function of nonmagnetic layer thickness
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United States of America Patent
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Aug 23, 1994
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N/A
app pub date -
May 6, 1993
filing date -
Feb 8, 1991
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Abstract
A multilayer magnetoresistive (MR) sensor formed on a substrate includes alternating layers of a ferromagnetic material and a non-magnetic metallic material. The ferromagnetic material and the non-magnetic material form bilayers which exhibit the property that the magnetoresistance of the multilayered structure oscillates as a function of thickness of the non-magnetic material. A current flow is produced through the MR sensor, and the variations in the resistivity of the MR sensor are sensed as a function of the magnetic field being sensed.
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