Method for writing to a flash memory array during erase suspend intervals

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United States of America Patent

PATENT NO 5341330
SERIAL NO

08145732

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Abstract

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A method for writing data to an entry in a portion of a flash EEPROM memory array during a period in which that portion of the array is being erased and writing is prohibited. The method includes writing the data to a new entry position apart from the portion of the array which is being erased along with a revision number which is greater than the revision number of the original data in the original portion of the array, writing of the busy condition of the original entry to a temporary storage position apart from the portion of the array which is being erased, and invalidating entries listed in the temporary storage position when the erase operation is concluded.

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Patent Owner(s)

Patent OwnerAddress
INTEL CORPORATIONSANTA CLARA CA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kynett, Virgil N Eldorado Hills, CA 16 1121
Wells, Steven E Citrus Heights, CA 43 2448
Winston, Mark Eldorado Hills, CA 5 785

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