Method for lift-off of epitaxial layers and applications thereof
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United States of America Patent
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Sep 6, 1994
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N/A
app pub date -
Apr 22, 1993
filing date -
Apr 22, 1993
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Abstract
The present invention provides for improved methods of fabricating layered materials which are epitaxially grown on an electrically conductive single crystal substrate. The improved methods comprise the step of applying an electrochemical potential between the layered material/substrate and a counter electrode to oxidize and dissolve a thin etch layer positioned between the film and substrate, to thereby free the layered material from the substrate.
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