Structure for shielding conductors

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United States of America Patent

PATENT NO 5345105
SERIAL NO

08103362

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Abstract

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A shielding structure (10) and method of formation. The shielding structure (10) has a substrate (12). A first dielectric layer (14) overlies the substrate (12). A conductive layer (16) is formed overlying the dielectric layer (14), is patterned, and is etched to form electrically isolated conductive regions from conductive layer (16). The electrically isolated conductive regions have sidewalls and the etching of conductive layer (16) exposes portions of dielectric layer (14). The exposed portions of dielectric layer (14) are etched to form trenched portions of dielectric layer (14). A second dielectric layer (18) is formed overlying the electrically isolated conductive regions, including the sidewalls, and overlying the trenched portions to create recessed regions that separate the electrically isolated conductive regions. A shielding conductive layer (20) is formed overlying dielectric layer (18) and at least partially fills the recessed regions to shield the electrically isolated conductive regions from each another.

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Patent Owner(s)

Patent OwnerAddress
FREESCALE SEMICONDUCTOR INC6501 WILLIAM CANNON DRIVE WEST AUSTIN TX 78735

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kosa, Yasunobu Austin, TX 23 1210
Sun, Shih-Wei Austin, TX 79 2357
Yeargain, John R Austin, TX 6 277

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