Method for generating power slits

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United States of America Patent

PATENT NO 5345394
SERIAL NO

07833419

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Abstract

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An automatic method of generating slits in power buses on a chip. The present invention includes three embodiments. The first embodiment is directed to a generic method of generating power slits. Once bus dimensions are identified, predetermined parameters for optimal power slit size and number are used to automatically generate a power slit layer for the mask database. The second embodiment is a continuation of the first embodiment and is directed to a method of generating power slits for an orthogonal corner case; where two buses overlap at 90.degree. angles. This is performed by locating all corner cases. Power slits are removed within a cross (corner/intersect) area of overlapping buses. At this point power slits from overlapping buses are extended across the corner/intersect area. The extension lines are logically ANDed together resulting in points within the corner/intersect area where the extension lines intersect. These intersection points indicate where new types of power slits, called 'holes', can be generated. The third embodiment is directed to a method of generating power slits for non-orthogonal corner case. It is generally identical to the second embodiment.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chuang, Tatao San Jose, CA 19 188
Hoang, Hy San Jose, CA 11 83
Lin, Chong M Sunnyvale, CA 12 308
Long, Tran San Jose, CA 10 45

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