Importance

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Abstract

The invention is directed to a semiconductor memory device which uses a field effect transistor having a ferroelectric gate film to store data therein. A storing field effect transistor is connected to a reading transistor in series. The storing field effect transistor has its gate connected to a writing and erasing transistor. In writing data, the writing and erasing transistor is made conductive, and writing voltage is applied to the gate of the storing field effect transistor through the writing and erasing transistor. This permits a polarization of the ferroelectric gate film to have a direction corresponding to data to be written. There is no need of controlling a potential at a semiconductor substrate provided with the storing field effect transistor in writing data, and therefore, no undesired voltage is applied to any other elements formed in the semiconductor substrate.

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First Claim