Antiresonant Fabry-Perot p-i-n modulator
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 6, 1994
Issued Date -
N/A
app pub date -
Jan 27, 1993
filing date -
Nov 6, 1991
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The advantages of both active and passive modelocking techniques are realized within a single device by providing a p-i-n modulator formed at antiresonance within a Fabry-Perot etalon. The p-i-n modulator actively modulates light within the laser cavity by introducing periodic loss in response to changing voltages applied to the modulator. The p-i-n modulator includes an intrinsic region that is disposed between a p-doped region and an n-doped region. The modelocking performance of the p-i-n modulator is enhanced by the saturable absorber action of the intrinsic region.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully