Process for depositing a copper containing layer I
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United States of America Patent
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-
Sep 13, 1994
Grant Date -
N/A
app pub date -
Jul 26, 1991
filing date -
Jul 27, 1990
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The deposition of a copper-containing layer on a substrate by decomposing, particularly by a CVD process, a compound corresponding to the formula (I) RO--Cu--L (I) in which R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, is described, together with previously unknown compounds of formula (I) which may be used in the process.
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