A new method of forming a self-aligning polysilicon gate is described. A gate silicon oxide is formed over a silicon substrate. A polysilicon layer is formed over the gate oxide. A native silicon oxide layer is formed over the polysilicon layer. A second polysilicon layer is formed over the native silicon oxide layer. Additional alternating layers of polysilicon and native silicon oxide are formed as desired. The wafer is annealed at between about 800.degree. to 1000.degree. C. This causes, it is believed, the silicon oxide gas from the multiple native silicon oxide layers to be exhausted resulting in the removal of all silicon oxide layers. A polycide layer is formed overlying the multiple polysilicon layers, if desired. Conventional lithography and etching techniques are used to form a gate. Ions are implanted into the substrate to form source/drain regions, using the multilayer gate as a mask. Rapid thermal annealing activates the impurities. A dielectric layer is deposited followed by conventional metallization techniques to complete construction of the integrated circuit.
Please note there is up to 60 days of latency in this Status indicator for certain status conditions. You can obtain up-to-date Status indicator readings by ordering PAIR for the file.
An application with the status "Published" (which means it is pending) may be recently abandoned, but not yet updated to reflect its abandoned status. However, an application filed less than one year ago is unlikely to be abandoned.
A patent with the status "Granted" may be recently expired, but not yet updated to reflect its expired status. However, it is highly unlikely a patent less than 3.5 years old would be expired.
An application with the status "Abandoned" is almost always current, but there is a small chance it was recently revived and the status not yet updated.
This priority date is an estimated earliest
priority date and is purely an estimation. This date should not be
taken as legal conclusion. No representations are made as to the
accuracy of the date listed. Please consult a legal professional
before relying on this date.